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Product Description
Stanford Microdevices' SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm. These unconditionally stable amplifiers provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.
25 20
SNA-586
Preliminary Preliminary
DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier
NGA-586 Recommended for New Designs
Small Signal Gain vs. Frequency @ ID=65mA
dB
15 10 5 0 2
Product Features * High Output IP3: 32.5 dBm @ 850 MHz * Cascadable 50 Ohm Gain Block * Patented GaAs HBT Technology * Operates From Single Supply
8
Frequency GHz
4
6
Applications * Cellular, PCS, CDPD, Wireless Data, SONET
Units Min. Typ. 17.6 18.4 18.4 32.5 31.6 31.6 17.6 19.6 18.1 17.4 5000 1.4:1 1.4:1 22.3 21.6 21.3 4.0 4.4 4.9 254 5.4 Max.
Electrical Specifications
Symbol Parameters: Test Conditions: GHz Z0 = 50 Ohms, ID = 65mA, T = 25C Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz
P1dB
dBm dBm dBm dBm dBm dBm dB dB dB MHz
IP3
Third Order Intercept Point Power out per tone = 0 dBm
S21 Bandwidth S11 S22 S12 NF VD Rth,j-l
Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead)
f = DC-5000 MHz f = DC-5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz
dB dB dB dB V
o
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Absolute Maximum Ratings
Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l
Parameter Supply Current Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature Value 110 -40 to +85 16 -40 to +150 +175 Unit mA C dBm C C
Typical Parameter 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 25C 19.8 3.9 31.8 17.4 14.1 22.5 19.6 4.0 32.5 17.6 15.6 22.3 18.1 4.0 31.6 18.4 16.6 21.6 17.4 31.6 18.4 16.8 21.3 Unit
Test Condition (ID = 65 mA, unless otherwise noted)
dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB dB dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB
*NOTE: While the SNA-586 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85C ambient temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier
200
Junction Temperature (C)
Junction Temp vs. Dissipated Power
1.E+08 1.E+07
MTTF (hrs)
MTTF vs. Dissipated Power
85C lead temp
180
1.E+06 1.E+05
160
85C lead temp
140 0.25
Pdiss (W) Output IP3 vs. ID vs. Frequency
65m A 80m A
1.E+04
0.35
0.45
0.25
0.35
Pdiss (W) Output P1dB vs. ID vs. Frequency
65m A 80m A
0.45
40
21 19
35
dBm
30
dBm
17 15 13
0.5 1.5
25
GHz
2.5
3.5
0.5
1.5
GHz
2.5
3.5
4.5 4.25
dB 4
65m A 80m A
NF vs. ID vs. Frequency
20 19
dB
Small Signal Gain vs. ID vs. Frequency
65mA 80mA
18 17
3.75 3.5 0.5 1
GHz
16 15
1.5 2
0.5
1.5
GHz
2.5
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier
Pin # 1 2 3 Function RF IN GND RF OUT/Vcc Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. Same as Pin 2.
4
GND
Application Schematic for Operation at 850 MHz
Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) @ 65 mA Rbias (Ohms) @ 80 mA 8V 47 39 9V 62 51 12V 110 91 15V 160 130
1uF
68pF
Rbias VS
33nH
50 ohm microstrip
2 1 3 100pF 4 100pF
50 ohm microstrip
Application Schematic for Operation at 1950 MHz
1uF 22pF Rbias VS
22nH
50 ohm microstrip
2 1 3 68pF 4 68pF
50 ohm microstrip
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 4
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier
25 20 -15
S21, ID=65mA, T=25C
-10
S12, ID=65mA, T=25C
dB
15 10 5 0 2 4 6 8
dB
-20
-25
Frequency GHz
0
2
4
6
8
Frequency GHz
0 -5
S11, ID=65mA, T=25C
0 -5
S22, ID=65mA, T=25C
dB
-10 -15 -20 -25 0 2
dB
-10 -15 -20 -25
Frequency GHz
4
6
8
0
2
4
6
8
Frequency GHz
S11, ID=65mA, Ta=25C
Freq. Min = 0.05 GHz Freq. Max = 10 GHz
S22, ID=65mA, Ta=25C
Freq. Min = 0.05 GHz Freq. Max = 10 GHz
F = 10 GHz
F = 10 GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 5
http://www.stanfordmicro.com
EDS-101397 Rev A
VS
Rbias Cbypass
Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier
Part Number Ordering Information
Part Number SNA-586 Reel Size 7" Devices/Reel 1000
Cblock Lchoke
Cblock
Caution ESD Sensitive:
Appropriate precautions in handling, packaging and testing devices must be observed.
IN
OUT
STANFORD MICRODEVICES ECB-100330 Rev B SOT-86 Eval Board
Part Symbolization The part will be symbolized with an "S5" designator on the top surface of the package.
Evaluation Board Layout PCB Pad Layout
S5
Package Dimensions
S5
Dimensions are in inches [mm]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 6
http://www.stanfordmicro.com
EDS-101397 Rev A

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